DMTH10H010LCT document number: ds 38444 rev. 2 - 2 1 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct 100v 175c n - channel enhancement mode mosfet product summary v (br)dss r ds(on) package i d t c = + 25c 1 00 v 9.5m gs = 10v to220 ab 10 8a description t his new generation mosfet features low on - resistance and fast swit ching, making it ideal for high - efficiency power management applications. applications ? ? ? ? features ? + 175 c C ? ? d ss rating for power a pplication ? ? lead - free finish; rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q10 1 standards for high reliability mechanical data ? ? , Dgreen molding compound ? ? ? C ordering information (note 4 ) part number case packaging d mt h 10h010l ct to220 ab 50 pieces/tube notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information = manufacturers marking yyww h10h010
DMTH10H010LCT document number: ds 38444 rev. 2 - 2 2 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current t c = +25c t c = + 10 0c i d 10 8 76 a maximum continuous body diode f orward current t c = +25c i s 9 0 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 92 a avalanche current, l=0.3mh (note 7 ) i as 10 a avalanche energy, l=0.3mh (note 7 ) e as 15 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) s teady s tate p d w thermal resistance, junction to ambient (note 5 ) s teady s tate r ? ja c/w total power dissipation t c = +25c p d w thermal resistance, junction to case r ? j c c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical c haracteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 100 v v gs = 0v, i d = 1m a zero gate voltage drain current i dss 1 a v ds = 80 v, v gs = 0v gate - source leakage i gss 1 00 n a v gs = 20 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) 1.4 1.9 3.5 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 6.9 9.5 m ? v gs = 10 v, i d = 13 a diode forward voltage v sd 1.3 v v gs = 0v, i s = 13 a dynamic characteristics (note 7 ) input capacitance c iss 2592 pf v ds = 50 v, v gs = 0v f = 1mhz output capacitance c oss 792 reverse transfer capacitance c rss 45 gate resistance r g 2 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 53.7 n c ? v d d = 50 v, i d = 13 a , v gs = 10 v gate - source charge q gs 10.6 gate - drain charge q gd 8.2 turn - on delay time t d( on ) 11.6 ns v dd = 50 v, v gs = 10 v, i d = 13 a , r g = 6 turn - on rise time t r 14.1 turn - off delay time t d( off ) 42.9 turn - off fall time t f 22 reverse recovery time t rr 49.8 ns i f = 13 a, di/dt = 10 0a/ s reverse recovery charge q rr 85.1 n c notes: 5. device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
DMTH10H010LCT document number: ds 38444 rev. 2 - 2 3 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d v , drain -source voltage (v) ds figure 1 typical output characteristics v = 3.5v gs v = 3.0v gs v = 10.0v gs v = 6.0v gs v = 5.0v gs v = 4.5v gs v = 4.0v gs 0 5 10 15 20 25 30 1 2 3 4 5 6 i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics v = 5.0v ds t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? t = 175 c a ? t = 150 c a ? 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 35 40 45 50 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 10v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 4 8 12 16 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical transfer characteristics i = 13a d 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 5 typical on-resistance vs. drain current and junction temperature v = 10v gs t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? t = 175 c a ? t = -55 c a ? 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 175 r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with junction temperature v = 10v gs i = 13a d
DMTH10H010LCT document number: ds 38444 rev. 2 - 2 4 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 55 v gs (v) q g (nc) figure 11. gate charge v ds = 50v, i d = 13a t j , junction temperature ( c ) 0 0.003 0.006 0.009 0.012 0.015 -50 -25 0 25 50 75 100 125 150 175 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with junction temperature v = 10v gs i = 13a d 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature (c) a figure 8 gate threshold variation vs. junction temperature i = 250a d i = 1ma d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = 125 c a ? t = 150 c a ? t = 175 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area r ds(on) limited t = 175c j (m ax ) t = 25c a v = 10v gs single pulse dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100 s w
DMTH10H010LCT document number: ds 38444 rev. 2 - 2 5 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. to220ab to220ab dim min max typ a 3.56 4.82 - a1 0.51 1.39 - a2 2.04 2.92 - b 0.39 1.01 0.81 b2 1.15 1.77 1.24 c 0.356 0.61 - d 14.22 16.51 - d1 8.39 9.01 - d 2 11.45 12.87 - e - - 2.54 e1 - - 5.08 e 9.66 10.66 - e 1 6.86 8.89 - h1 5.85 6.85 - l 12.70 14.73 - l1 - 6.35 - l2 15.80 1 6.20 16.00 p 3.54 4.08 - q 2.54 3.42 - all dimensions in mm 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration times (sec) figure 13 transient thermal resistance r (t) = r(t) * r ? ? jc jc r = 0.93c/w ? jc duty cycle, d = t1/ t2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d = 0.9 e q d1 d ?p l1 l e b a1 a h1 c a2 b2 h1 d2 e1 e1 e/2 l2
DMTH10H010LCT document number: ds 38444 rev. 2 - 2 6 of 6 www.diodes.com march 2016 ? diodes incorporated dmth10h010l ct important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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